Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

摘要

The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors reported so far. The constant activation energy supports charge trapping by residual water as the common origin.